1 of 2 MBR830 - mbr860 8.0a schottky barrier rectifier features l m a n p d e k c b j g r pin 1 12 pin 2 case to-220ac dim min max a 14.22 15.88 b 9.65 10.67 c 2.54 3.43 d 5.84 6.86 e 6.35 g 12.70 14.73 j 0.51 1.14 k 3.53 4.09 l 3.56 4.83 m 1.14 1.40 n 0.30 0.64 p 2.03 2.92 r 4.83 5.33 all dimensions in mm maximum ratings and electrical characteristics @ t a = 25 c unless otherwise specified schottky barrier chip guard ring die construction for transient protection low power loss, high efficiency high surge capability high current capability and low forward voltage drop for use in low voltage, high frequency inverters, free wheeling, and polarity protection application plastic material: ul flammability classification rating 94v-0 mechanical data case: molded plastic terminals: plated leads solderable per mil-std-202, method 208 polarity: see diagram weight: 2.24 grams (approx.) mounting position: any marking: type number single phase, half wave, 60hz, resistive or inductive load. for capacitive load, derate current by 20%. characteristic symbol mbr 830 mbr 835 mbr 840 mbr 845 mbr 850 mbr 860 unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 30 35 40 45 50 60 v rms reverse voltage v r(rms) 21 24.5 28 31.5 35 42 v average rectified output current (note 1) @ t c = 125 c i o 8.0 a non-repetitive peak forward surge current 8.3ms single half sine-wave superimposed on rated load (jedec method) i fsm 150 a repetitive peak reverse surge current @ t 2.0 s i rrm 1.0 a forward voltage drop @ i f = 8.0a, t c = 125 c @ i f = 8.0a, t c = 25 c @ i f = 16a, t c = 25 c v fm 0.57 0.70 0.84 0.70 0.80 0.95 v peak reverse current @ t c = 25 c at rated dc blocking voltage @ t c = 125 c i rm 0.1 15 ma typical junction capacitance (note 2) c j 250 pf typical thermal resistance junction to case (note 1) r jc 3.0 k/w voltage rate of change (rated v r ) dv/dt 1000 v/ s operating and storage temperature range t j, t stg -65 to +150 c notes: 1. thermal resistance junction to case mounted on heatsink. 2. measured at 1.0mhz and applied reverse voltage of 4.0v dc. www.kersemi.com
2 of 2 i , inst ant aneous for w ard current (a) f v , instantaneous forward voltage (v) fi g .2 t y pical forward characteristics f 0.1 1.0 10 100 0 0.4 0.8 1.2 1.6 t = 25 c j pulse width = 300 s 2% duty cycle MBR830 - mbr845 mbr850 / mbr860 0 50 100 150 200 250 300 1 10 100 i , peak for w ard surge current (a) fsm number of cycles at 60hz fi g . 3 max non-repetitive sur g e current 10 100 1000 0.1 1.0 10 100 c , junction cap acit ance (pf) j v , reverse voltage (v) fi g .4 t y pical junction capacitance r t = 25 c f = 1.0mhz j 0 2 4 6 8 10 0 50 100 150 i , a verage fwd current (a) (a v) t , case temperature ( c) fi g . 1 forward current deratin g curve c www.kersemi.com
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